Investigation of Bias Temperature Instability in HfInZnO Thin Film Transistor

J. S. Chang; S. W. Kim; D. W. Kwon; J. H. Kim; J. C. Park; I. Song; U. I. Jung; C. J. Kim; B. G. Park

doi:https://doi.org/10.7567/SSDM.2010.P-6-14

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜 2010年9月24日
The University of Tokyo, Tokyo, Japan

[P-6-14] Investigation of Bias Temperature Instability in HfInZnO Thin Film Transistor

J. S. Chang¹、S. W. Kim¹、D. W. Kwon¹、J. H. Kim¹、J. C. Park²、I. Song²、U. I. Jung²、C. J. Kim²、B. G. Park¹ (1.Seoul National Univ.、2.Samsung Adv. Inst. of Tech. , Korea)

https://doi.org/10.7567/SSDM.2010.P-6-14

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