Study of the CeO<sub>2</sub>/HfO<sub>2</sub>/InAs metal-oxide-semiconductor capacitors with different post-deposition-annealing temperatures

T. E. Shie; C. H. Chang; Y. C. Lin; K. Kakushima; H. Iwai; P. C. Lu; T. C. Lin; G. N. Huang; E. Y. Chang

doi:https://doi.org/10.7567/SSDM.2010.P-6-15

[P-6-15] Study of the CeO₂/HfO₂/InAs metal-oxide-semiconductor capacitors with different post-deposition-annealing temperatures

T. E. Shie¹、C. H. Chang¹、Y. C. Lin¹、K. Kakushima²、H. Iwai²、P. C. Lu¹、T. C. Lin¹、G. N. Huang¹、E. Y. Chang¹ (1.National Chiao Tung Univ. , Taiwan、2.Tokyo Inst. of Tech. , Japan)

https://doi.org/10.7567/SSDM.2010.P-6-15

2010 International Conference on Solid State Devices and Materials

[P-6-15] Study of the CeO2/HfO2/InAs metal-oxide-semiconductor capacitors with different post-deposition-annealing temperatures

[P-6-15] Study of the CeO₂/HfO₂/InAs metal-oxide-semiconductor capacitors with different post-deposition-annealing temperatures