Enhanced Device Performance of AlGaN/GaN MOSHEMT with Thermal Oxidation

S. Liu; J. Wang; R. Gong; Z. Dong; M. Yu; C. P. Wen; C. Zeng; Y. Cai; B. Zhang

doi:https://doi.org/10.7567/SSDM.2010.P-6-9

2010 International Conference on Solid State Devices and Materials

Sep 21, 2010 - Sep 24, 2010
The University of Tokyo, Tokyo, Japan

[P-6-9] Enhanced Device Performance of AlGaN/GaN MOSHEMT with Thermal Oxidation

S. Liu¹, J. Wang¹, R. Gong¹, Z. Dong¹, M. Yu¹, C. P. Wen¹, C. Zeng², Y. Cai², B. Zhang² (1.Peking Univ., 2.Suzhou Inst. of Nano-tech and Nano-bionics , China)

https://doi.org/10.7567/SSDM.2010.P-6-9

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