Degradation Mechanism for CLC Poly-Si n-TFTs under Low Vertical-Field HC Stress with Different Laser Annealing Powers

S. Y. Chang; M. C. Wang; Z. Y. Hsieh; C. Chen

doi:https://doi.org/10.7567/SSDM.2010.P-8-16

[P-8-16] Degradation Mechanism for CLC Poly-Si n-TFTs under Low Vertical-Field HC Stress with Different Laser Annealing Powers

S. Y. Chang¹、M. C. Wang^1,2、Z. Y. Hsieh²、C. Chen³ (1.Ming Hsin University of Science & Technology、2.National Taipei Univ. of Tech.、3.National Chiao Tung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2010.P-8-16

2010 International Conference on Solid State Devices and Materials

[P-8-16] Degradation Mechanism for CLC Poly-Si n-TFTs under Low Vertical-Field HC Stress with Different Laser Annealing Powers