[P-9-4] Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon-Germanium/Germanium Heterostructure

G. Han¹、P. Guo¹、Y. Yang¹、L. Fan¹、Y. S. Yee¹、C. Zhan¹、Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore)

https://doi.org/10.7567/SSDM.2010.P-9-4