[P-9-4] Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon-Germanium/Germanium Heterostructure

G. Han¹, P. Guo¹, Y. Yang¹, L. Fan¹, Y. S. Yee¹, C. Zhan¹, Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore)

https://doi.org/10.7567/SSDM.2010.P-9-4