655件中(271 - 280)

[H-1-1] Let us update the present status of research on magnetic semiconductors

H. Munekata¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-1-2] In situ Observation of Fe growth on GaAs(001) and InAs(001) by X-ray diffraction

S. Fujikawa¹、M. Takahasi¹ (1.JAEA , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-1-3] Luminescence Characteristics and Annealing Effect of Tb-doped AlBNO Films for Inorganic Electroluminescence Devices

K. Masumoto¹、A. Semba¹、C. Kimura¹、T. Taniguchi²、K. Watanabe²、H. Aoki¹ (1.Osaka Univ.、2.National Inst. for Materials Sci. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-1-4] Influence of Nitrogen Doping on the LaAlO Film Properties

M. Honjo¹、N. Komatsu¹、C. Kimura¹、H. Aoki¹ (1.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-1] Towards Industrial Applications of Graphene Electrodes

B. H. Hong¹ (1.Sungkyunkwan Univ. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-2] Uniformity of Graphene CVD Growth Depending on the Thickness and Domain Structure of Epitaxial Metal Films

S. Yoshii¹、K. Nozawa¹、K. Toyoda¹、N. Matsukawa¹ (1.Panasonic Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-3] Synthesis of High Quality Graphene Using Diamond-Like Carbon (DLC) as Solid Carbon Source

B. Liu¹、G. Han¹、M. C. Yang²、Q. Zhou¹、S. M. Koh¹、Y. C. Yeo¹ (1.National University of Singapore、2.Data Storage Institute , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-4] TEM characterization of epitaxial graphene formed on Si(111), Si(110), Si(100)

H. Handa¹、R. Takahashi¹、S. Abe¹、K. Imaizumi¹、M. H. Jung¹、S. Ito¹、H. Fukidome¹、M. Suemitsu^1,2 (1.Tohoku Univ.、2.CREST-JST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-3-1] Crack-Free Epitaxial ZnO film on Si(111) with Gd₂O₃(Ga₂O₃) buffer layer

B. H. Lin^1,2、W. R. Liu^1,2、C. C. Kuo¹、C. H. Hsu^2,1、W. F. Hsieh^1,3、M. Hong⁴、J. Kwo⁴ (1.National Chiao Tung Univ.、2.National Synchrotron Radiation Research Center、3.National Cheng Kung Univ.、4.National Tsing Hua Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-3-2] Optical properties of ZnO/Au core/shell nano-tips

Y. H. Ko¹、J. S. Yu¹ (1.Kyung Hee Univ. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

655件中(271 - 280)