Improvement of Current Collapse in Deeply Recessed Gate AlGaN/GaN High Electron Mobility Transistors without Field Modulating Structure

A. Imai; K. Yamanaka; Y. Suzuki; T. Nanjo; M. Suita; K. Shiozawa; Y. Abe; E. Yagyu; A. Shima

doi:https://doi.org/10.7567/SSDM.2011.A-1-4

[A-1-4] Improvement of Current Collapse in Deeply Recessed Gate AlGaN/GaN High Electron Mobility Transistors without Field Modulating Structure

A. Imai¹, K. Yamanaka², Y. Suzuki¹, T. Nanjo¹, M. Suita¹, K. Shiozawa¹, Y. Abe¹, E. Yagyu¹, A. Shima¹ (1.Advanced Tech. R&D Center, Mitsubishi Electric Corp., 2.Information Tech. R&D Center, Mitsubishi Electric Corp. , Japan)

https://doi.org/10.7567/SSDM.2011.A-1-4

2011 International Conference on Solid State Devices and Materials

[A-1-4] Improvement of Current Collapse in Deeply Recessed Gate AlGaN/GaN High Electron Mobility Transistors without Field Modulating Structure