Improvement of Current Collapse in Deeply Recessed Gate AlGaN/GaN High Electron Mobility Transistors without Field Modulating Structure

A. Imai; K. Yamanaka; Y. Suzuki; T. Nanjo; M. Suita; K. Shiozawa; Y. Abe; E. Yagyu; A. Shima

doi:https://doi.org/10.7567/SSDM.2011.A-1-4

[A-1-4] Improvement of Current Collapse in Deeply Recessed Gate AlGaN/GaN High Electron Mobility Transistors without Field Modulating Structure

A. Imai¹、K. Yamanaka²、Y. Suzuki¹、T. Nanjo¹、M. Suita¹、K. Shiozawa¹、Y. Abe¹、E. Yagyu¹、A. Shima¹ (1.Advanced Tech. R&D Center, Mitsubishi Electric Corp.、2.Information Tech. R&D Center, Mitsubishi Electric Corp. , Japan)

https://doi.org/10.7567/SSDM.2011.A-1-4

2011 International Conference on Solid State Devices and Materials

[A-1-4] Improvement of Current Collapse in Deeply Recessed Gate AlGaN/GaN High Electron Mobility Transistors without Field Modulating Structure