[A-2-2] Low-turn-on voltage heterojunction bipolar transistors with a C-doped In_xGa_1-xAs_1-ySb_y base grown by metalorganic chemical vapor deposition

T. Hoshi¹、H. Sugiyama¹、H. Yokoyama¹、K. Kurishima¹、M. Ida¹ (1.NTT Photonics Labs, NTT Corp. , Japan)

https://doi.org/10.7567/SSDM.2011.A-2-2