The Japan Society of Applied Physics

2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-2-2] Low-turn-on voltage heterojunction bipolar transistors with a C-doped InxGa1-xAs1-ySby base grown by metalorganic chemical vapor deposition

T. Hoshi1, H. Sugiyama1, H. Yokoyama1, K. Kurishima1, M. Ida1 (1.NTT Photonics Labs, NTT Corp. , Japan)

https://doi.org/10.7567/SSDM.2011.A-2-2