[A-2-4] In_0.53Ga_0.47As Channel N-MOSFETs with Shallow Metallic S/D Extension

Z. Zhu¹、X. Gong¹、 Ivana¹、Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore)

https://doi.org/10.7567/SSDM.2011.A-2-4