In<sub>0.53</sub>Ga<sub>0.47</sub>As Channel N-MOSFETs with Shallow Metallic S/D Extension

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

Z. Zhu¹, X. Gong¹, Ivana¹, Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore)