Low Temperature Processed Zinc Oxide Thin Film Transistors by Plasma Assisted Atomic Layer Deposition

Y. Kawamura; M. Tani; N. Hattori; N. Miyatake; M. Horita; Y. Ishikawa; Y. Uraoka

doi:https://doi.org/10.7567/SSDM.2011.A-5-2

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-5-2] Low Temperature Processed Zinc Oxide Thin Film Transistors by Plasma Assisted Atomic Layer Deposition

Y. Kawamura¹、M. Tani¹、N. Hattori²、N. Miyatake²、M. Horita¹、Y. Ishikawa¹、Y. Uraoka^1,3 (1.NAIST、2.Mitsui Eng. and Shipbuilding Co., Ltd.、3.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.A-5-2

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