Low Temperature Processed Zinc Oxide Thin Film Transistors by Plasma Assisted Atomic Layer Deposition

Y. Kawamura; M. Tani; N. Hattori; N. Miyatake; M. Horita; Y. Ishikawa; Y. Uraoka

doi:https://doi.org/10.7567/SSDM.2011.A-5-2

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-5-2] Low Temperature Processed Zinc Oxide Thin Film Transistors by Plasma Assisted Atomic Layer Deposition

Y. Kawamura¹, M. Tani¹, N. Hattori², N. Miyatake², M. Horita¹, Y. Ishikawa¹, Y. Uraoka^1,3 (1.NAIST, 2.Mitsui Eng. and Shipbuilding Co., Ltd., 3.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.A-5-2

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