[A-5-5] The Influence of a SnInGaZnO Electron Barrier Layer on the performance of Low-Driving Voltage InGaZnO Thin-Film Transistors

H. Y. Huang¹、S. J. Wang¹、C. H. Wu²、C. K. Chiang¹、Y. C. Huang¹、J. Y. Su¹ (1.National Cheng Kung Univ.、2.Chung Hua Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2011.A-5-5