The Japan Society of Applied Physics

[A-5-5] The Influence of a SnInGaZnO Electron Barrier Layer on the performance of Low-Driving Voltage InGaZnO Thin-Film Transistors

H. Y. Huang1, S. J. Wang1, C. H. Wu2, C. K. Chiang1, Y. C. Huang1, J. Y. Su1 (1.National Cheng Kung Univ., 2.Chung Hua Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2011.A-5-5