High Integrity SiO<sub>2</sub> Gate Insulator Formed by Microwave-Excited PECVD for AlGaN/GaN Hybrid MOS-HFET on Si Substrate

H. Kambayashi; T. Nomura; S. Kato; H. Ueda; A. Teramoto; S. Sugawa; T. Ohmi

doi:https://doi.org/10.7567/SSDM.2011.A-8-1

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-8-1] High Integrity SiO₂ Gate Insulator Formed by Microwave-Excited PECVD for AlGaN/GaN Hybrid MOS-HFET on Si Substrate

H. Kambayashi^1,3、T. Nomura¹、S. Kato¹、H. Ueda²、A. Teramoto³、S. Sugawa³、T. Ohmi³ (1.Advanced Power Device Res. Association、2.Tokyo Electron Tech. Development Inst. Inc.、3.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.A-8-1

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2011 International Conference on Solid State Devices and Materials

[A-8-1] High Integrity SiO2 Gate Insulator Formed by Microwave-Excited PECVD for AlGaN/GaN Hybrid MOS-HFET on Si Substrate

[A-8-1] High Integrity SiO₂ Gate Insulator Formed by Microwave-Excited PECVD for AlGaN/GaN Hybrid MOS-HFET on Si Substrate