High Integrity SiO<sub>2</sub> Gate Insulator Formed by Microwave-Excited PECVD for AlGaN/GaN Hybrid MOS-HFET on Si Substrate

H. Kambayashi; T. Nomura; S. Kato; H. Ueda; A. Teramoto; S. Sugawa; T. Ohmi

doi:https://doi.org/10.7567/SSDM.2011.A-8-1

[A-8-1] High Integrity SiO₂ Gate Insulator Formed by Microwave-Excited PECVD for AlGaN/GaN Hybrid MOS-HFET on Si Substrate

H. Kambayashi^1,3, T. Nomura¹, S. Kato¹, H. Ueda², A. Teramoto³, S. Sugawa³, T. Ohmi³ (1.Advanced Power Device Res. Association, 2.Tokyo Electron Tech. Development Inst. Inc., 3.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.A-8-1

2011 International Conference on Solid State Devices and Materials

[A-8-1] High Integrity SiO2 Gate Insulator Formed by Microwave-Excited PECVD for AlGaN/GaN Hybrid MOS-HFET on Si Substrate

[A-8-1] High Integrity SiO₂ Gate Insulator Formed by Microwave-Excited PECVD for AlGaN/GaN Hybrid MOS-HFET on Si Substrate