[A-8-3] Impacts of Dry Etching of GaN and AlGaN Surfaces on Interface Properties of GaN-based MOS Structures S. Kim1、Y. Hori1、N. Azumaishi1、T. Hashizume1,2 (1.Hokkaido Univ.、2.CREST-JST , Japan) https://doi.org/10.7567/SSDM.2011.A-8-3