[A-8-3] Impacts of Dry Etching of GaN and AlGaN Surfaces on Interface Properties of GaN-based MOS Structures

S. Kim¹, Y. Hori¹, N. Azumaishi¹, T. Hashizume^1,2 (1.Hokkaido Univ., 2.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.A-8-3