[AL-6-2] Thermodynamic Control of Interface Layer Formation in High-k Gate Stacks on 4H-SiC

S. Nakatsubo¹, T. Nishimura¹, K. Kita¹, K. Nagashio¹, A. Toriumi¹ (1.Univ. of Tokyo , Japan)

https://doi.org/10.7567/SSDM.2011.AL-6-2