Characteristics of 4H-SiC p-Channel MOSFETs with Ion-Implanted Buried Channel

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

M. Okamoto¹, M. Iijima¹, T. Nagano¹, K. Fukuda¹, H. Okumura¹ (1.AIST , Japan)