[AL-6-5] Effects of Substrate Defects on the Gate Leakage Current of AlGaN/GaN Heterojunction FETs Fabricated on Na Flux Bulk GaN
R. Hasegawa1、N. Yafune1、H. Tokuda1、Y. Mori3、H. Amano4、M. Kuzuhara1
(1.Univ. of Fukui、2.Sharp Corp.、3.Osaka Univ.、4.Nagoya Univ. , Japan)
https://doi.org/10.7567/SSDM.2011.AL-6-5