Effects of Substrate Defects on the Gate Leakage Current of AlGaN/GaN Heterojunction FETs Fabricated on Na Flux Bulk GaN

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

R. Hasegawa¹, N. Yafune¹, H. Tokuda¹, Y. Mori³, H. Amano⁴, M. Kuzuhara¹ (1.Univ. of Fukui, 2.Sharp Corp., 3.Osaka Univ., 4.Nagoya Univ. , Japan)