[B-3-1] Room temperature fabrication of HfON gate insulator for low-voltage operating pentacene-based organic field-effect transistors

M. Liao¹、H. Ishiwara^1,2、S. Ohmi¹ (1.Tokyo Tech , Japan、2.Konkuk Univ. , Korea)

https://doi.org/10.7567/SSDM.2011.B-3-1