[B-9-2] Solution-processed C₆₀ field-effect transistors with high mobility

W. Kang¹、M. Kitamura^1,2、M. Kamura^1,3、S. Aomori^1,3、Y. Arakawa¹ (1.Univ. of Tokyo、2.Kobe Univ.、3.Sharp Corp. , Japan)

https://doi.org/10.7567/SSDM.2011.B-9-2