[B-9-2] Solution-processed C₆₀ field-effect transistors with high mobility

W. Kang¹, M. Kitamura^1,2, M. Kamura^1,3, S. Aomori^1,3, Y. Arakawa¹ (1.Univ. of Tokyo, 2.Kobe Univ., 3.Sharp Corp. , Japan)

https://doi.org/10.7567/SSDM.2011.B-9-2