Accurate and Ready-to-use Parasitic Capacitances Models for Advanced 2D/3D CMOS Device Structure Comparison

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

J. Lacord^1,2, D. Hoguet¹, D. Rideau¹, G. Ghibaudo², F. Boeuf¹ (1.STMicroelectronics, 2.IMEP-LAHC , France)