[D-2-1] Current Drive Enhancement of Strained Ge nMISFET with SiGe Stressors by Uniaxial Tensile Stress

Y. Kamimuta¹, Y. Moriyama¹, K. Ikeda¹, M. Oda¹, T. Tezuka¹ (1.MIRAI-Toshiba , Japan)

https://doi.org/10.7567/SSDM.2011.D-2-1