[D-2-1] Current Drive Enhancement of Strained Ge nMISFET with SiGe Stressors by Uniaxial Tensile Stress

Y. Kamimuta¹、Y. Moriyama¹、K. Ikeda¹、M. Oda¹、T. Tezuka¹ (1.MIRAI-Toshiba , Japan)

https://doi.org/10.7567/SSDM.2011.D-2-1