[D-2-3] Lateral Source Relaxed/Strained Layer Heterostructures for Ballistic CMOS: Physical Relaxation Mechanism for Strained Layers by O+ Ion Implantation
T. Mizuno1, J. Takehi1, S. Tanabe1
(1.Kanagawa Univ. , Japan)
https://doi.org/10.7567/SSDM.2011.D-2-3
