[D-2-3] Lateral Source Relaxed/Strained Layer Heterostructures for Ballistic CMOS: Physical Relaxation Mechanism for Strained Layers by O⁺ Ion Implantation

T. Mizuno¹、J. Takehi¹、S. Tanabe¹ (1.Kanagawa Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.D-2-3