Tunnel Field-Effect Transistor with L-shaped Germanium Source: Device Physics and Design

K. L. Low; C. Zhan; G. Han; Y. Yang; K.H. Goh; P. Guo; E.H. Toh; Y.C. Yeo

doi:https://doi.org/10.7567/SSDM.2011.D-4-4

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[D-4-4] Tunnel Field-Effect Transistor with L-shaped Germanium Source: Device Physics and Design

K. L. Low¹, C. Zhan¹, G. Han¹, Y. Yang¹, K.H. Goh¹, P. Guo¹, E.H. Toh², Y.C. Yeo¹ (1.National Univ. of Singapore, 2.GLOBALFOUNDRIES Singapore Pte. Ltd. , Singapore)

https://doi.org/10.7567/SSDM.2011.D-4-4

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