Tunnel Field-Effect Transistor with L-shaped Germanium Source: Device Physics and Design

K. L. Low; C. Zhan; G. Han; Y. Yang; K.H. Goh; P. Guo; E.H. Toh; Y.C. Yeo

doi:https://doi.org/10.7567/SSDM.2011.D-4-4

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[D-4-4] Tunnel Field-Effect Transistor with L-shaped Germanium Source: Device Physics and Design

K. L. Low¹、C. Zhan¹、G. Han¹、Y. Yang¹、K.H. Goh¹、P. Guo¹、E.H. Toh²、Y.C. Yeo¹ (1.National Univ. of Singapore、2.GLOBALFOUNDRIES Singapore Pte. Ltd. , Singapore)

https://doi.org/10.7567/SSDM.2011.D-4-4

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