[D-6-3] Extremely Small Within-Device Variability in Intrinsic Channel Tri-Gate Silicon Nanowire MOSFETs

K. Mao¹、T. Mizutani¹、A. Kumar¹、T. Saraya¹、T. Hiramoto¹ (1.Univ. of Tokyo , Japan)

https://doi.org/10.7567/SSDM.2011.D-6-3