Advantages of Silicon Nanowire MOSFETs over Planar Ones Investigated from the Viewpoints of Static and Noise Properties

W. Feng; R. Hettiarachchi; S. Sato; K. Kakushima; M. Niwa; H. Iwai; K. Yamada; K. Ohmori

doi:https://doi.org/10.7567/SSDM.2011.D-7-3

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[D-7-3] Advantages of Silicon Nanowire MOSFETs over Planar Ones Investigated from the Viewpoints of Static and Noise Properties

W. Feng^1,2, R. Hettiarachchi^1,2, S. Sato³, K. Kakushima³, M. Niwa^1,2, H. Iwai³, K. Yamada^1,2, K. Ohmori^1,2 (1.Univ. of Tsukuba, 2.CREST-JST, 3.Tokyo Tech , Japan)

https://doi.org/10.7567/SSDM.2011.D-7-3

▲