Advantages of Silicon Nanowire MOSFETs over Planar Ones Investigated from the Viewpoints of Static and Noise Properties

W. Feng; R. Hettiarachchi; S. Sato; K. Kakushima; M. Niwa; H. Iwai; K. Yamada; K. Ohmori

doi:https://doi.org/10.7567/SSDM.2011.D-7-3

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[D-7-3] Advantages of Silicon Nanowire MOSFETs over Planar Ones Investigated from the Viewpoints of Static and Noise Properties

W. Feng^1,2、R. Hettiarachchi^1,2、S. Sato³、K. Kakushima³、M. Niwa^1,2、H. Iwai³、K. Yamada^1,2、K. Ohmori^1,2 (1.Univ. of Tsukuba、2.CREST-JST、3.Tokyo Tech , Japan)

https://doi.org/10.7567/SSDM.2011.D-7-3

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