[E-1-5] High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate

T. Yamanaka¹, K. Yamamoto¹, K. Sakamoto¹, H. Yang¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.E-1-5