[E-1-5] High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate

T. Yamanaka¹、K. Yamamoto¹、K. Sakamoto¹、H. Yang¹、D. Wang¹、H. Nakashima¹ (1.Kyushu Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.E-1-5