In depth characterization of electrical effects of dopants (Al, La, Mg, N) in high-k/metal gate stacks

G. Reimbold; M. Cassé; X. Garros; C. Leroux; M. Charbonnier; L. Brunet; S. Baudot; P. Caubet; C. Fenouillet-Béranger; F. Andrieu; O. Weber; P. Perreau; F. Martin

doi:https://doi.org/10.7567/SSDM.2011.E-2-1

[E-2-1] In depth characterization of electrical effects of dopants (Al, La, Mg, N) in high-k/metal gate stacks

G. Reimbold¹, M. Cassé¹, X. Garros¹, C. Leroux¹, M. Charbonnier¹, L. Brunet^2,1, S. Baudot^2,1, P. Caubet², C. Fenouillet-Béranger^1,2, F. Andrieu¹, O. Weber¹, P. Perreau^1,2, F. Martin¹ (1.CEA-LETI/MINATEC, 2.STMicroelectronics , France)

https://doi.org/10.7567/SSDM.2011.E-2-1

2011 International Conference on Solid State Devices and Materials

[E-2-1] In depth characterization of electrical effects of dopants (Al, La, Mg, N) in high-k/metal gate stacks