Role of Al atoms in (TaC)1-xAlx gate electrode on Vfb for HfO2 gate stack

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

M. Kimura¹, T. Nabatame², H. Yamada¹, A. Ohi², T. Chikyow², T. Ohishi¹ (1.Shibaura Inst. of Tech., 2.NIMS , Japan)