[E-2-2] Role of Al atoms in (TaC)_1-xAl_x gate electrode on V_fb for HfO₂ gate stack

M. Kimura¹、T. Nabatame²、H. Yamada¹、A. Ohi²、T. Chikyow²、T. Ohishi¹ (1.Shibaura Inst. of Tech.、2.NIMS , Japan)

https://doi.org/10.7567/SSDM.2011.E-2-2