Impurity Profile Extraction of Semiconductor Devices from STM Tunneling Currents by Current Continuity Based Simulation

K. Fukuda; M. Nishizawa; T. Tada; L. Bolotov; K. Suzuki; S. Sato; H. Arimoto; T. Kanayama

doi:https://doi.org/10.7567/SSDM.2011.E-2-3

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[E-2-3] Impurity Profile Extraction of Semiconductor Devices from STM Tunneling Currents by Current Continuity Based Simulation

K. Fukuda¹、M. Nishizawa¹、T. Tada¹、L. Bolotov²、K. Suzuki³、S. Sato³、H. Arimoto¹、T. Kanayama¹ (1.AIST、2.Univ. of Tsukuba、3.Fujitsu Semiconductor Ltd. , Japan)

https://doi.org/10.7567/SSDM.2011.E-2-3

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