Impurity Profile Extraction of Semiconductor Devices from STM Tunneling Currents by Current Continuity Based Simulation

K. Fukuda; M. Nishizawa; T. Tada; L. Bolotov; K. Suzuki; S. Sato; H. Arimoto; T. Kanayama

doi:https://doi.org/10.7567/SSDM.2011.E-2-3

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[E-2-3] Impurity Profile Extraction of Semiconductor Devices from STM Tunneling Currents by Current Continuity Based Simulation

K. Fukuda¹, M. Nishizawa¹, T. Tada¹, L. Bolotov², K. Suzuki³, S. Sato³, H. Arimoto¹, T. Kanayama¹ (1.AIST, 2.Univ. of Tsukuba, 3.Fujitsu Semiconductor Ltd. , Japan)

https://doi.org/10.7567/SSDM.2011.E-2-3

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