[E-2-4] Influence of channel area scaling on Weibull distribution of TDDB for poly-Si channel FET

I. Hirano¹, M. Saito¹, T. Numata¹, Y. Mitani¹ (1.Toshiba Corp. , Japan)

https://doi.org/10.7567/SSDM.2011.E-2-4