[E-3-3] On the Si Surface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology

R. Kuroda¹, A. Teramoto¹, X. Li¹, T. Suwa¹, S. Sugawa¹, T. Ohmi¹ (1.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.E-3-3