[E-3-3] On the Si Surface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology

R. Kuroda¹、A. Teramoto¹、X. Li¹、T. Suwa¹、S. Sugawa¹、T. Ohmi¹ (1.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.E-3-3