[E-3-4] High Quality and Low Thermal Budget Silicon Nitride Deposition Using PECVD for Gate Spacer, Silicide Block and Contact Etch Stopper

Y. Nakao¹, R. Kuroda¹, H. Tanaka¹, A. Teramoto¹, S. Sugawa¹, T. Ohmi¹ (1.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.E-3-4