[E-3-4] High Quality and Low Thermal Budget Silicon Nitride Deposition Using PECVD for Gate Spacer, Silicide Block and Contact Etch Stopper

Y. Nakao¹、R. Kuroda¹、H. Tanaka¹、A. Teramoto¹、S. Sugawa¹、T. Ohmi¹ (1.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.E-3-4